|Keyword||CPC||PCC||Volume||Score||Length of keyword|
|igbt vs mosfet||0.68||0.5||8069||22|
|igbt full form||0.91||0.5||8702||88|
|igbt or fet for motor control||0.54||0.7||4806||85|
|igbt gate driver||0.41||1||1167||83|
|igbt power module||0.45||0.3||3775||10|
|igbt inverter basics||0.54||0.6||1603||79|
|igbt working principle||0.43||0.5||8681||24|
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.What are the advantages of IGBT?
The main advantages of IGBT over a Power MOSFET and a BJT are: 1. It has a very low on-state voltage drop due to conductivity modulation and has superior on-state current density. So smaller chip size is possible and the cost can be reduced.What is the full form of IGBT?
The full form of IGBT is Insulated Gate Bipolar Transistor. Figure-2 depicts 600 Volt G6H Trench IGBT structure and circuit symbol. Both the structures look same, but the main difference in IGBT p-substrate is added below the n-substrate.